Display device

ABSTRACT

A display device includes a substrate including a display area and a component area including a transmission area, and display elements disposed on the substrate. The substrate includes grooves corresponding to the transmission area of the component area.

CROSS-REFERENCE TO RELATED APPLICATION(S)

This is a continuation application of U.S. patent application Ser. No.17/060,784, filed Oct. 1, 2020 (now pending), the disclosure of which isincorporated herein by reference in its entirety. U.S. patentapplication Ser. No. 17/060,784 claims priority to and benefits ofKorean Patent Application No. 10-2019-0179548 under 35 U.S.C. § 119,filed in the Korean Intellectual Property Office on Dec. 31, 2019, theentire contents of which are incorporated herein by reference.

BACKGROUND 1. Technical Field

One or more embodiments relate to a display device including atransmission area.

2. Description of the Related Art

Display devices have been used for various purposes. As thickness andweight of display devices have been reduced, utilization of displaydevices has increased.

In a display device, various functions related to a display device arebeing added while at the same time increasing a display area. Researchinto a display device having a region capable of performing variousfunctions while also displaying images is being performed.

It is to be understood that this background of the technology sectionis, in part, intended to provide useful background for understanding thetechnology. However, this background of the technology section may alsoinclude ideas, concepts, or recognitions that were not part of what wasknown or appreciated by those skilled in the pertinent art prior to acorresponding effective filing date of the subject matter disclosedherein.

SUMMARY

One or more embodiments may provide a display device, in whichdiffraction of light passing through a transmission area may be reduced.

Additional aspects will be set forth in part in the description whichfollows and, in part, will be apparent from the description, or may belearned by practice of the presented embodiments of the disclosure.

According to an embodiment, a display device may include a substrateincluding display area and a component area including a transmissionarea, and display elements disposed on the substrate. The substrate mayinclude grooves corresponding to the transmission area of the componentarea.

The grooves may respectively extend to form a closed line shape in thetransmission area.

The grooves may include a first groove and a second groove, the firstgroove surrounding the second groove.

The grooves may be symmetrically disposed based on a central line thatmay be perpendicular to an upper surface of the substrate.

The substrate may include a base layer and a barrier layer disposed onthe base layer, the barrier layer may include a first transmission holecorresponding to the transmission area, the grooves may be disposed inthe base layer and extending to the first transmission hole, and a depthof the grooves may be substantially same as a thickness of the baselayer.

The display device may further include an insulating layer disposedbetween the substrate and the display elements, the insulating layerincluding a second transmission hole corresponding to the transmissionarea, and a thin film encapsulation layer including an inorganicencapsulation layer and an organic encapsulation layer, the thin filmencapsulation layer covering the display elements.

The inorganic encapsulation layer may extend to the second transmissionhole and may be arranged along the grooves.

The organic encapsulation layer may extend to the second transmissionhole to be in the grooves.

A width of one of the grooves may be substantially same as a width ofanother one of the grooves.

A width of one of the grooves may be different from a width of anotherone among the grooves.

The display device may further include protrusions disposed betweenadjacent ones of the grooves. A width of one of the protrusions may bedifferent from a width of another one of the protrusions.

The display device may further include a component under the substrate,the component corresponding to the component area.

According to another embodiment, a display device may include asubstrate including a display area including a first display element, acomponent area including a second display element and a transmissionarea, and lower metal patterns on the substrate, the lower metalpatterns corresponding to the transmission area and being disposed apartfrom one another.

The lower metal patterns may respectively extend to form a closed lineshape in the transmission area. The lower metal patterns may include afirst lower metal pattern and a second lower metal pattern, the firstlower metal pattern surrounding the second lower metal pattern.

The lower metal patterns may be symmetrically disposed based on acentral line that may be perpendicular to an upper surface of thesubstrate.

The lower metal patterns may have widths that are substantially same asone another, and intervals among the lower metal patterns may besubstantially same as each other.

An interval between adjacent ones of the lower metal patterns may bedifferent from an interval between other adjacent ones of the lowermetal patterns.

A width of a first lower metal pattern may be different from a width ofa second lower metal pattern.

The display device may further include a lower metal layer between thesubstrate and the second display element, wherein the lower metalpatterns and the lower metal layer may be disposed in a same layer.

The display device may further include a buffer layer covering the lowermetal layer, the buffer layer including a third transmission holecorresponding to the transmission area, wherein the lower metal patternsmay be disposed in the third transmission hole.

BRIEF DESCRIPTION OF THE DRAWINGS

The above and other aspects, features, and advantages of certainembodiments of the disclosure will be more apparent from the followingdescription taken in conjunction with the accompanying drawings, inwhich:

FIG. 1A is a schematic perspective view of a display device according toan embodiment;

FIG. 1B is a schematic perspective view of a display device according toanother embodiment;

FIGS. 2A to 2C are schematic cross-sectional views partially showing adisplay device according to an embodiment;

FIG. 3 is a schematic plan view of a display panel according to anembodiment;

FIG. 4 is a schematic diagram of an equivalent circuit electricallyconnected to an organic light-emitting diode in a display deviceaccording to an embodiment;

FIG. 5A is an enlarged schematic view of region A in FIG. 3 ;

FIG. 5B is an enlarged schematic view of a transmission area;

FIG. 5C is an enlarged schematic view of region A in FIG. 3 according toanother embodiment;

FIG. 6 is a schematic cross-sectional view partially showing a displaydevice according to an embodiment;

FIG. 7 is a schematic cross-sectional view of a component area accordingto an embodiment;

FIG. 8 is a schematic cross-sectional view showing an enlarged view of atransmission area according to an embodiment;

FIGS. 9A to 9C are schematic cross-sectional views showing an enlargedview of a transmission area according to another embodiment;

FIG. 10A is a schematic plan view in which an exposure mask correspondsto a component area and a display area;

FIGS. 10B to 10E are schematic cross-sectional views illustratingprocesses in a method of manufacturing a display device according to anembodiment;

FIG. 11A is an enlarged schematic view of region A in FIG. 3 accordingto another embodiment;

FIG. 11B is an enlarged schematic view of the transmission area of FIG.11A;

FIG. 11C is an enlarged schematic view of region A in FIG. 3 accordingto another embodiment; and

FIGS. 12A to 12C are schematic cross-sectional views showing an enlargedview of a transmission area according to another embodiment.

DETAILED DESCRIPTION OF THE EMBODIMENTS

Reference will now be made in detail to embodiments, examples of whichare illustrated in the accompanying drawings, wherein like referencenumerals refer to like elements throughout. In this regard, theembodiments may have different forms and should not be construed asbeing limited to the descriptions set forth herein. Accordingly, theembodiments are merely described below, by referring to the figures, toexplain aspects of the description.

As used herein, the term “and/or” includes any and all combinations ofone or more of the associated listed items. For example, “A and/or B”may be understood to mean “A, B, or A and B.” The terms “and” and “or”may be used in the conjunctive or disjunctive sense and may beunderstood to be equivalent to “and/or.” Throughout the disclosure, theexpression “at least one of a, b or c” indicates only a, only b, only c,both a and b, both a and c, both b and c, all of a, b, and c, orvariations thereof.

While such terms as “first,” “second,” etc., may be used to describevarious components, such components are not to be limited to the aboveterms. The above terms are used only to distinguish one component fromanother.

An expression used in the singular encompasses the expression of theplural, unless it has a clearly different meaning in the context.

It is to be understood that terms such as “including,” “having,” and“comprising” are intended to indicate the existence of the features,numbers, steps, actions, components, parts, or combinations thereofdisclosed in the specification, and are not intended to preclude thepossibility that one or more other features, numbers, steps, actions,components, parts, or combinations thereof may exist or may be added.

It will be understood that when a layer, region, or component isreferred to as being “formed on” another layer, region, or component, itmay be directly or indirectly formed on another layer, region, orcomponent. For example, intervening layers, regions, or components maybe present.

Sizes of components in the drawings may be exaggerated for convenienceof explanation. In other words, since sizes and thicknesses ofcomponents in the drawings may be arbitrarily illustrated forconvenience of explanation, the following embodiments are not limitedthereto.

When a certain embodiment may be implemented differently, a specificprocess order may be performed differently from the described order. Forexample, two consecutively described processes may be performedsubstantially at the same time or performed in an order opposite to thedescribed order.

In the embodiments below, when layers, areas, or elements or the likeare referred to as being “connected,” it will be understood that theymay be directly connected or an intervening portion may be presentbetween layers, areas or elements. For example, when layers, areas, orelements or the like are referred to as being “electrically connected,”they may be directly electrically connected, or layers, areas orelements may be indirectly electrically connected and an interveningportion may be present.

Terms such as “overlap” may include layer, stack, face or facing,extending over, extending under, covering or partly covering or anyother suitable term as would be appreciated and understood by those ofordinary skill in the art.

“About” as used herein is inclusive of the stated value and means withinan acceptable range of deviation for the particular value as determinedby one of ordinary skill in the art, considering the measurement inquestion and the error associated with measurement of the particularquantity (i.e., the limitations of the measurement system). For example,“about” may mean within one or more standard deviations, or within ±30%,20%, 5% of the stated value.

Unless otherwise defined, all terms used herein (including technical andscientific terms) have the same meaning as commonly understood by thoseskilled in the art to which this disclosure pertains. It will be furtherunderstood that terms, such as those defined in commonly useddictionaries, should be interpreted as having a meaning that isconsistent with their meaning in the context of the relevant art andwill not be interpreted in an ideal or excessively formal sense unlessclearly defined in the specification.

A display device 1 may be a device for displaying images, and mayinclude a mobile device that may be portable, for example, a gameconsole, a multimedia device, and an ultra-small PC. The display device1 that will be described later may include a liquid crystal display, anelectrophoretic display, an organic light-emitting display, an inorganiclight-emitting display, a field emission display, a surface-conductionelectron-emitter display, a quantum dot display, a plasma display, acathode ray display, etc. Hereinafter, according to an embodiment, it isconsidered that the display device 1 may be an organic light-emittingdisplay device, but the display device of the disclosure is not limitedthereto. For example, various types of display devices as mentionedabove may be used.

FIG. 1A is a schematic perspective view of the display device 1according to an embodiment. FIG. 1B is a schematic perspective view ofthe display device 1 according to another embodiment.

Referring to FIG. 1A, the display device 1 may include a display areaDA, a component area CA, and a non-display area NDA. The component areaCA may display images and may include components arranged therein.

The display area DA may realize images. First pixels P1 may be in thedisplay area DA. Here, a first image may be provided by using lightemitted from the first pixels P1.

The component area CA may realize images and may include a component(not shown). The component may include a sensor or a camera using aninfrared ray, a visible ray, or sound, as described below with referenceto FIGS. 2A to 2C.

In an embodiment, the component area CA may be at least partiallysurrounded by the display area DA. In FIG. 1A, the component area CA maybe adjacent to (e.g., at a side of) the display area DA as a bar type,but the component area CA may be variously located in the non-displayarea NDA.

The component area CA may include a transmission area TA, through whichlight and/or sound output from the component may transmit to outside orproceeding from outside to the component. The transmission area TA maynot include a pixel. Here, when an infrared ray may pass through thetransmission area TA, an infrared ray transmittance of the componentarea CA may be about 15% or greater, for example, about 20% or greater,about 25% or greater, about 85% or greater, or about 90% or greater.

Second pixels P2 may be in the component area CA and may emit light toprovide a second image. Here, the first image and the second image maybe some parts of one image provided by the display device 1. As anotherexample, the first image and the second image may be separate imagesindependent from each other.

The non-display area NDA may not provide an image, and thus may notinclude a pixel. The non-display area NDA may be adjacent to (e.g.,entirely surround) the display area DA and the component area CA.Drivers, etc., for providing electrical signals or electric power to thefirst pixels P1 and the second pixels P2, may be in the non-display areaNDA. The non-display area NDA may include a pad portion to which anelectronic device, a printed circuit board, etc. may be electricallyconnected.

Referring to FIG. 1B, the component area CA may be entirely surroundedby the display area DA.

In an embodiment, the component area CA may have a circular shape or anelliptical shape in a plan view. In another embodiment, the componentarea CA may have a polygonal shape such as a rectangular shape, etc. ina plan view. In another embodiment, the component area CA may include acurvature area. Also, the location of the component area CA and thenumber of component areas CA may vary.

FIGS. 2A to 2C are schematic cross-sectional views partially showing adisplay device 1 according to an embodiment.

Referring to FIGS. 2A to 2C, the display device 1 may include a displaypanel 10 and a component 20 overlapping the display panel 10.

In particular, referring to FIG. 2A, the display panel 10 includes asubstrate 100, a display layer 200 on the substrate 100, a thin filmencapsulation layer 300 on the display layer 200, and an opticalfunctional layer such as a touch input layer 40 and an optical plate50A. Here, the substrate 100 may be understood to include a display areaDA, a component area CA, and a non-display area (not shown).

The substrate 100 may include glass or a polymer resin such aspolyethersulfone, polyarylate, polyetherimide, polyethylene naphthalate,polyethylene terephthalate, polyphenylene sulfide, polyimide,polycarbonate, cellulose tri-acetate, cellulose acetate propionate,etc., or a combination thereof. The substrate 100 including the polymerresin may be flexible, rollable, or bendable. The substrate 100 may havea multi-layered structure including a base layer including the abovementioned polymer resin and a barrier layer (not shown).

In an embodiment, the substrate 100 may include grooves 100Gv. Here, thegrooves 100Gv may correspond to the transmission area TA. The grooves100Gv may be provided to prevent diffraction of light discharged fromthe component 20 or light incident to the component 20. This will bedescribed later. In another embodiment, the substrate 100 may include alower conductive pattern corresponding to the transmission area TA,instead of the grooves 100Gv. The lower conductive pattern and that of alower metal layer BML may be at a same layer.

The display layer 200 may be on an upper surface of the substrate 100,and a lower protective film 175 may be on a lower surface of thesubstrate 100, wherein the lower surface may be opposite to the uppersurface. The lower protective film 175 may be attached to the lowersurface of the substrate 100. An adhesive layer may be between the lowerprotective film 175 and the substrate 100. As another example, the lowerprotective film 175 may be on (e.g., directly on) the lower surface ofthe substrate 100, and an adhesive layer may not be provided between thelower protective film 175 and the substrate 100.

The lower protective film 175 may support and protect the substrate 100.The lower protective film 175 may include an opening 1750P correspondingto the component area CA. In case that the lower protective film 175includes the opening 1750P, a transmittance of the component area CA,e.g., a light transmittance of the transmission area TA, may beimproved. The lower protective film 175 may include polyethyleneterephthalate or polyimide, or a combination thereof. In case that thesubstrate 100 includes glass, the lower protective film 175 may beomitted.

The display layer 200 may include a buffer layer 111, an insulatinglayer IL, a circuit layer including a thin film transistor TFT, and adisplay element layer including a display element, e.g., an organiclight-emitting diode OLED. The thin film transistors TFT and the organiclight-emitting diodes OLED electrically connected to the thin filmtransistors TFT may be in the display area DA and the component area CA.The component area CA may include the transmission area TA, in which thethin film transistor TFT and the organic light-emitting diode OLED maynot be provided. In other words, the display area DA may include a firstorganic light-emitting diode OLED1 that may be a first display element,and the component area CA may include the transmission area TA and asecond organic light-emitting diode OLED2 that may be a second displayelement. Hereinafter, the organic light-emitting diode OLED will bedescribed in detail because the first organic light-emitting diode OLED1and the second organic light-emitting diode OLED2 may be the same as orsimilar to each other.

The buffer layer 111 may be on the substrate 100 to reduce or blockinfiltration of impurities, moisture, or external air from below thesubstrate 100, and to provide a flat surface on the substrate 100. Thebuffer layer 111 may include an inorganic material such as an oxidematerial or a nitride material, an organic material, or aninorganic-organic composite material, and may have a single-layered ormulti-layered structure including the inorganic material and the organicmaterial. In some embodiments, the buffer layer 111 may include siliconoxide (SiO₂) or silicon nitride (SiNx), or a combination thereof.

In an embodiment, the lower metal layer BML may be in the component areaCA. Here, the lower metal layer BML may correspond to the second pixelsP2. For example, the lower metal layer BML may correspond to the thinfilm transistor TFT in the component area CA. Therefore, the lower metallayer BML may prevent external light from reaching the thin filmtransistor TFT. A constant voltage or a signal may be applied to thelower metal layer BML to prevent damage to the pixel circuit due to anelectrostatic discharge. Although not shown in FIG. 2A, in someembodiments, the lower metal layer BML may correspond to the firstpixels P1 in the display area DA.

The lower metal layer BML may be between the substrate 100 and thebuffer layer 111. As another example, the buffer layer 111 may include afirst buffer layer and a second buffer layer, and the lower metal layerBML may be between the first buffer layer and the second buffer layer.Hereinafter, an example in which the lower metal layer BML may bebetween the substrate 100 and the buffer layer 111 will be describedbelow.

In an embodiment, the buffer layer 111 and the insulating layer IL mayeach include a transmission hole. Therefore, a transmittance of light(including, e.g., a signal) output from the component 20 to outside orproceeding from outside towards the component may be improved. In someembodiments, the buffer layer 111 and the insulating layer IL may notinclude a transmission hole.

The thin film encapsulation layer 300 may cover the display layer 200.In an embodiment, the thin film encapsulation layer 300 may include atleast one inorganic encapsulation layer and at least one organicencapsulation layer. In this regard, FIG. 2A shows a first inorganicencapsulation layer 310 and a second inorganic encapsulation layer 330,and an organic encapsulation layer 320 between the first and secondinorganic encapsulation layers 310 and 330.

The first inorganic encapsulation layer 310 and the second inorganicencapsulation layer 330 may each include one or more inorganic materialsfrom aluminum oxide, titanium oxide, tantalum oxide, hafnium oxide, zincoxide, silicon nitride, and silicon oxynitride. The organicencapsulation layer 320 may include a polymer-based material. Thepolymer-based material may include an acryl-based resin, an epoxy-basedresin, polyimide, polyethylene, etc., or a combination thereof. In anembodiment, the organic encapsulation layer 320 may include acrylate.

In an embodiment, the first inorganic encapsulation layer 310 and theorganic encapsulation layer 320 may extend to the transmission holes tobe on the grooves 100Gv. In particular, the first inorganicencapsulation layer 310 may be arranged along the shapes of the grooves100Gv in the transmission area TA. In detail, the first inorganicencapsulation layer 310 may be integrally provided along side and uppersurfaces of the grooves 100Gv. Also, the organic encapsulation layer 320may be on the first inorganic encapsulation layer 310. In detail, theorganic encapsulation layer 320 may be filled inside the grooves 100Gv.

Referring to FIG. 2B, the display layer 200 may be covered by anencapsulation substrate 30B. Here, the encapsulation substrate 30B mayface the substrate 100 with the display layer 200 therebetween. Theremay be a gap between the encapsulation substrate 30B and the displaylayer 200. The encapsulation substrate 30B may include glass. A sealantmay be between the substrate 100 and the encapsulation substrate 30B,and the sealant may be in the non-display area NDA described above withreference to FIG. 1A or FIG. 1B. The sealant in the non-display area NDAmay surround the display area DA to prevent moisture from infiltratingthrough side surfaces of the display area DA. Hereinafter, as shown inFIG. 2A, an example in which the display layer 200 may be covered by thethin film encapsulation layer 300 will be described below in detail.

The touch input layer 40 may obtain coordinate information according toan external input, e.g., a touch event. The touch input layer 40 mayinclude a touch electrode and trace lines electrically connected to thetouch electrode. The touch input layer 40 may sense an external input bya mutual capacitance method or a self-capacitance method.

The touch input layer 40 may be on the thin film encapsulation layer300. As another example, the touch input layer 40 may be separatelymanufactured and may be coupled onto the thin film encapsulation layer300 via an adhesive layer such as an optical clear adhesive (OCA). In anembodiment, the touch input layer 40 may be on (e.g., directly on) thethin film encapsulation layer 300 as shown in FIG. 2A, and the adhesivelayer may not be between the touch input layer 40 and the thin filmencapsulation layer 300.

The optical functional layer may include an anti-reflection layer. Theanti-reflection layer may reduce a reflectivity of light (externallight) incident to the display device 1 from outside.

In some embodiments, the anti-reflection layer may include an opticalplate 50A including a retarder and/or a polarizer. The retarder may beof a film type or a liquid crystal coating type and may include a λ/2retarder and/or a λ/4 retarder. The polarizer may be of a film type or aliquid crystal coating type. The film-type polarizer may include astretched synthetic resin film, and the liquid crystal coating-typepolarizer may include liquid crystals arranged in an orientation.

Referring to FIG. 2C, in some embodiments, the anti-reflection layer mayinclude a filter plate 50B including a black matrix and color filters.The filter plate 50B may include a first layer 510, color filters 520under the first layer 510, a black matrix 530, and an overcoat layer540.

The color filters 520 may be arranged taking into account a color oflight emitted from each of the pixels in the display device 1. Forexample, the color filter 520 may be red, green, or blue according tothe color of light emitted from the organic light-emitting diode OLED.The transmission area TA may not include the color filters 520 and theblack matrix 530. For example, a layer including the color filters 520and the black matrix 530 may have a hole 5300P corresponding to thetransmission area TA, and the overcoat layer 540 may be at leastpartially filled in the hole 5300P. The overcoat layer 540 may includean organic material such as a resin, and the organic material may betransparent. A structure of the filter plate 50B may be also applied tothe display device 1 including the encapsulation substrate 30B shown inFIG. 2B.

In some embodiments, the anti-reflection layer may include a destructiveinterference structure. The destructive interference structure mayinclude a first reflective layer and a second reflective layer arrangedon different layers. First reflected light and second reflected lightthat may be respectively reflected by the first reflective layer and thesecond reflective layer may destructively interfere with each other, andaccordingly, a reflectivity of external light may be reduced.

The component 20 may be in the component area CA. The component 20 mayinclude an electronic element using light or sound. For example, theelectronic element may include a sensor for measuring a distance such asa proximity sensor, a sensor for sensing a body part of a user (e.g.,fingerprint, iris, face, etc.), a small-sized lamp outputting light, animage sensor for capturing an image (e.g., camera), etc. The electronicelement using light may use light of various wavelength bands such asvisible light, infrared rays, ultraviolet rays, etc. The electronicelement using sound may use ultrasound waves or sound of anotherfrequency band.

In some embodiments, the component 20 may include sub-components such asa light emitter and a light receiver. The light emitter and the lightreceiver may have an integrated structure or may have physicallyseparated structure, and a pair of the light emitter and the lightreceiver may configure the component 20.

One or more components 20 may be in the component area CA. In anembodiment, when the display device 1 includes components 20, thedisplay device 1 may include one component area CA. For example, thedisplay device 1 may include the component area CA described above withreference to FIG. 1A. The components 20 may be separated from oneanother in an x-direction (in particular, x-direction of FIG. 1A) in thecomponent area CA of a bar type. In some embodiments, when the displaydevice 1 includes the components 20, the display device 1 may includecomponent areas CA, and the number of which may correspond to that ofthe components 20. For example, the display device 1 may includecomponent areas CA described above with reference to FIG. 1B, and thecomponent areas CA may be apart from one another.

FIG. 3 is a schematic plan view of a display panel 10 according to anembodiment.

The display panel 10 may include an array of pixels in the substrate100. The pixels may include the first pixels P1 in the display area DAand the second pixels P2 in the component area CA.

In an embodiment, an area of the display area DA may be different fromthat of the component area CA. For example, the area of the display areaDA may be greater than that of the component area CA.

The first pixels P1 may be two-dimensionally provided in the displayarea DA, and the second pixels P2 may be two-dimensionally provided inthe component area CA. Also, the component area CA may include thetransmission area TA. The transmission area TA may be between twoneighboring second pixels P2.

The non-display area NDA may be adjacent to (e.g., entirely surround)the display area DA. A scan driver, a data driver, etc. may be in thenon-display area NDA. A pad 230 may be in the non-display area NDA. Thepad 230 may be adjacent to an edge of the substrate 100. The pad 230 maynot be covered by an insulating layer, but may be exposed andelectrically connected to a flexible printed circuit board FPCB. Theflexible printed circuit board FPCB may electrically connect acontroller to the pad 230 and may supply to the first pixels P1 and thesecond pixels P2 a signal or electric power transferred from thecontroller. In some embodiments, a data driver may be in the flexibleprinted circuit board FPCB. In order to transfer a signal or a voltagein the flexible printed circuit board FPCB to the first pixels P1 andthe second pixels P2, the pad 230 may be electrically connected tolines.

In another embodiment, an integrated circuit IC may be on the pad 230,instead of the flexible printed circuit board FPCB. The integratedcircuit IC may include, e.g., a data driver, and may be electricallyconnected to the pad 230 via an anisotropic conductive film including aconductive ball.

Each of the first pixels P1 and the second pixels P2 may emit certaincolor light by using an organic light-emitting diode OLED (see FIGS. 2Ato 2C). Each of the organic light-emitting diodes OLED may emit, forexample, red light, green light, or blue light. Each of the organiclight-emitting diodes OLED may be electrically connected to the pixelcircuit including a thin film transistor and a storage capacitor.

FIG. 4 is a schematic diagram of an equivalent circuit electricallyconnected to an organic light-emitting diode in a display deviceaccording to an embodiment.

Referring to FIG. 4 , the organic light-emitting diode OLED may beelectrically connected to a pixel circuit PC. The pixel circuit PC mayinclude a first thin film transistor T1, a second thin film transistorT2, and a storage capacitor Cst.

The second thin film transistor T2 may be a switching thin filmtransistor and may be electrically connected to a scan line SL and adata line DL, and may be configured to transfer a data voltage (or datasignal Dm) input from the data line DL to the first thin film transistorT1 based on a switching voltage (or switching signal Sn) input from thescan line SL. The storage capacitor Cst may be electrically connected tothe second thin film transistor T2 and a driving voltage line PL and maystore a voltage corresponding to a difference between a voltagetransferred from the second thin film transistor T2 and a first powervoltage ELVDD supplied to the driving voltage line PL.

The first thin film transistor T1 may be a driving thin film transistorelectrically connected to the driving voltage line PL and the storagecapacitor Cst and may control a driving current flowing in the organiclight-emitting diode OLED from the driving voltage line PL,corresponding to the voltage value stored in the storage capacitor Cst.The organic light-emitting diode OLED may emit light having a certainluminance according to the driving current. An opposite electrode (e.g.,a cathode) of the organic light-emitting diode OLED may receive supplyof a second power voltage ELVSS.

FIG. 4 shows that the pixel circuit PC may include two thin filmtransistors and one storage capacitor, but the number of thin filmtransistors and the number of storage capacitors may vary depending on adesign of the pixel circuit PC. For example, the pixel circuit PC mayinclude three or more thin film transistors.

FIG. 5A is an enlarged schematic view of region A in FIG. 3 . FIG. 5B isan enlarged schematic view of the transmission area TA. FIG. 5C is anenlarged schematic view of region A in FIG. 3 according to anotherembodiment.

Referring to FIG. 5A and FIG. 5B, the display device may include thedisplay area DA and the component area CA. The first pixels P1 may be inthe display area DA. The component area CA may include the second pixelsP2 and the transmission area TA.

The first pixels P1 may each include at least one sub-pixel emittinglight. For example, each of the first pixels P1 may include a first redsub-pixel Pr1, a first green sub-pixel Pg1, or a first blue sub-pixelPb1. In some embodiments, the first pixels P1 may further include afirst white sub-pixel.

In an embodiment, the first red sub-pixel Pr1, the first green sub-pixelPg1, and the first blue sub-pixel Pb1 may be arranged in a Pentile type.In another embodiment, the first red sub-pixel Pr1, the first greensub-pixel Pg1, and the first blue sub-pixel Pb1 may be arrangedvariously, for example, in a stripe type.

Similarly to the first pixels P1, the second pixels P2 may each includeat least one sub-pixel emitting light. For example, each of the secondpixels P2 may include a second red sub-pixel Pr2, a second greensub-pixel Pg2, or a second blue sub-pixel Pb2. Here, the second redsub-pixel Pr2, the second green sub-pixel Pg2, and the second bluesub-pixel Pb2 may be arranged in a Pentile type. In another embodiment,the second red sub-pixel Pr2, the second green sub-pixel Pg2, and thesecond blue sub-pixel Pb2 may be arranged variously, for example, in astripe type.

The transmission area TA may be adjacent to the second pixels P2 in thecomponent area CA. In detail, the transmission area TA may be adjacentto a group including the second red sub-pixel Pr2, the second greensub-pixel Pg2, and the second blue sub-pixel Pb2.

There may be transmission areas TA in the component area CA. Here, in anembodiment, the transmission areas TA may be provided to be shifted fromone another.

In an embodiment, the substrate 100 may include grooves 100Gvcorresponding to the transmission areas TA. For example, the grooves100Gv may include a first groove 100Gva, a second groove 100Gvb, and athird groove 100Gvc. In another example, the grooves 100Gv may include afirst groove 100Gva and a second groove 100Gvb. In another example, thegrooves 100Gv may include four or more grooves. Hereinafter, in FIG. 5A,an example in which the grooves 100Gv include the first groove 100Gva,the second groove 100Gvb, and the third groove 100Gvc will be describedbelow.

In an embodiment, the grooves 100Gv may each extend to form a closedline shape in the transmission area TA. For example, the grooves mayeach extend along a virtual single closed curve SCC in the transmissionarea TA. Here, the closed line shape (e.g., single closed curve SCC) maydenote a closed figure having a starting point and an ending point thatmay be the same as each other, e.g., a polygon, a circle, or an ellipse.For example, the first groove 100Gva may extend to form a closed lineshape (e.g., along a virtual first single closed curve SCCa). The secondgroove 100Gvb may extend to form a closed line shape (e.g., along avirtual second single closed curve SCCb). The third groove 100Gvc mayextend to form a closed line shape (e.g., along a virtual third singleclosed curve SCCc).

In an embodiment, central points CP of the single closed curves SCC maybe the same as one another. For example, the first single closed curveSCCa, the second single closed curve SCCb, and the third single closedcurve SCCc may have the same central points CP. Here, the single closedcurves SCC may be in a similarity relationship with each other.

In an embodiment, the first groove 100Gva may surround the second groove100Gvb. Also, the second groove 100Gvb may surround the third groove100Gvc.

Referring to FIG. 5A, the grooves 100Gv may have rectangular shapes. Indetail, the first single closed curve SCCa may have a rectangular shape.Therefore, the first groove 100Gva may extend in a rectangular shape.Also, the second groove 100Gvb and the third groove 100Gvc may alsoextend in the rectangular shape. In particular, in some embodiments, thegrooves 100Gv may have square shapes.

Referring to FIG. 5C, the grooves 100Gv may each have a curvature area.In detail, the grooves 100Gv may each have a circular shape or anelliptical shape. Here, the grooves 100Gv may be similar to one another.

In an embodiment, the grooves 100Gv may be provided to prevent the lightfrom being diffracted while passing through the transmission area TA. Inparticular, in case that the grooves 100Gv may be in the similarityrelationship, the diffraction occurring in the transmission area TA maybe further reduced.

FIG. 6 is a schematic cross-sectional view partially showing a displaydevice according to an embodiment. Referring to FIG. 6 , the displaydevice may include the substrate 100, the buffer layer 111, theinsulating layer IL, the organic light-emitting diode OLED, the thinfilm encapsulation layer 300, and the touch input layer 40. Theinsulating layer IL may include an inorganic insulating layer IIL and aplanarization layer 117.

In an embodiment, the substrate 100 may include a base layer including apolymer resin and a barrier layer including an inorganic insulatingmaterial. For example, the substrate 100 may include a first base layer101, a first barrier layer 102, a second base layer 103, and a secondbarrier layer 104 that may be sequentially stacked on each other in thestated order. The first base layer 101 and the second base layer 103 mayeach include polyether sulfone, polyacrylate, polyether imide,polyethylene naphthalate, polyethylene terephthalate, polyphenylenesulfide, polyarylate, polyimide, polycarbonate, cellulose acetatepropionate, etc. The first barrier layer 102 and the second barrierlayer 104 may each include an inorganic insulating material such assilicon oxide, silicon oxynitride, and/or silicon nitride. In anembodiment, the first base layer 101 may have a thickness of about 6 μmto about 10 μm. The second base layer 103 may have a thickness of about5.8 μm to about 9 μm. Also, the first base layer 101 and the second baselayer 103 may have a refractive index of about 1.5 to about 2.

The buffer layer 111 may be on the substrate 100. The buffer layer 111may reduce or prevent infiltration of impurities, moisture, or externalair from below the substrate 100. The buffer layer 111 may include aninorganic material such as an oxide material or a nitride material, anorganic material, or an inorganic-organic composite material, and mayhave a single-layered or multi-layered structure including the inorganicmaterial and the organic material.

The pixel circuit PC including the thin film transistor TFT and thestorage capacitor Cst may be on the buffer layer 111. The thin filmtransistor TFT may include a semiconductor layer A1, a gate electrode G1overlapping a channel region of the semiconductor layer A1, and a sourceelectrode S1 and a drain electrode D1 respectively electricallyconnected to a source region and a drain region of the semiconductorlayer A1. A gate insulating layer 112 may be between the semiconductorlayer A1 and the gate electrode G1, and a first interlayer insulatinglayer 113 and a second interlayer insulating layer 115 may be betweenthe gate electrode G1 and the source electrode S1 or between the gateelectrode G1 and the drain electrode D1.

The storage capacitor Cst may overlap the thin film transistor TFT. Thestorage capacitor Cst may include a first capacitor plate CE1 and asecond capacitor plate CE2 overlapping each other. In some embodiments,the gate electrode G1 of the thin film transistor TFT may include thefirst capacitor plate CE1 of the storage capacitor Cst. The firstinterlayer insulating layer 113 may be between the first capacitor plateCE1 and the second capacitor plate CE2.

The semiconductor layer A1 may include polysilicon. In some embodiments,the semiconductor layer A1 may include amorphous silicon. In someembodiments, the semiconductor layer A1 may include an oxide of at leastone selected from the group consisting of indium (In), gallium (Ga),stannum (Sn), zirconium (Zr), vanadium (V), hafnium (Hf), cadmium (Cd),germanium (Ge), chrome (Cr), titanium (Ti), and zinc (Zn). Thesemiconductor layer A1 may include a channel region, and a source regionand a drain region doped with impurities.

The gate insulating layer 112 may include an inorganic insulatingmaterial such as silicon oxide, silicon oxynitride, and silicon nitride,and may have a single-layered or multi-layered structure including thestated materials.

The gate electrode G1 or the first capacitor plate CE1 may have asingle-layered or multi-layered structure including a low-resistiveconductive material such as molybdenum (Mo), aluminum (Al), copper (Cu),and/or titanium (Ti).

The first interlayer insulating layer 113 may include an inorganicinsulating material such as silicon oxide, silicon oxynitride, andsilicon nitride, and may have a single-layered or multi-layeredstructure including the stated materials.

The second capacitor plate CE2 may have a single-layered ormulti-layered structure including aluminum (Al), platinum (Pt),palladium (Pd), argentum (Ag), magnesium (Mg), aurum (Au), nickel (Ni),neodymium (Nd), iridium (Ir), chromium (Cr), lithium (Li), calcium (Ca),molybdenum (Mo), titanium (Ti), tungsten (W), and/or copper (Cu).

The second interlayer insulating layer 115 may include an inorganicinsulating material such as silicon oxide, silicon oxynitride, andsilicon nitride, and may have a single-layered or multi-layeredstructure including the stated materials.

The source electrode S1 or the drain electrode D1 may have asingle-layered or multi-layered structure including aluminum (Al),platinum (Pt), palladium (Pd), argentum (Ag), magnesium (Mg), aurum(Au), neodymium (Nd), iridium (Ir), chromium (Cr), nickel (Ni), lithium(Li), calcium (Ca), molybdenum (Mo), titanium (Ti), tungsten (W), and/orcopper (Cu). For example, the source electrode S1 or the drain electrodeD1 may have a triple-layered structure including titanium layer/aluminumlayer/titanium layer.

The planarization layer 117 may include a material different from thatof at least one inorganic insulating layer IIL located thereunder, e.g.,the gate insulating layer 112, the first interlayer insulating layer113, and the second interlayer insulating layer 115. The planarizationlayer 117 may include an organic insulating material. The planarizationlayer 117 may include an organic insulating material such as acryl,benzocyclobutene (BCB), polyimide, hexamethyldisiloxane (HMDSO), etc.,or a combination thereof. The organic insulating material of theplanarization layer 117 may be a photosensitive organic insulatingmaterial.

A pixel electrode 221 may be on the planarization layer 117. The pixelelectrode 221 may be electrically connected to the thin film transistorTFT via a contact hole in the planarization layer 117.

The pixel electrode 221 may include a reflective layer includingargentum (Ag), magnesium (Mg), aluminum (Al), platinum (Pt), palladium(Pd), aurum (Au), nickel (Ni), neodymium (Nd), iridium (Ir), chromium(Cr), or a compound thereof. The pixel electrode 221 may include areflective layer including the above-stated material, and a transparentconductive layer on and/or under the reflective layer. The transparentconductive layer may include indium tin oxide (ITO), indium zinc oxide(IZO), zinc oxide (ZnO), indium oxide (In₂O₃), indium gallium oxide, oraluminum zinc oxide (AZO), or a combination thereof. In an embodiment,the pixel electrode 221 may have a triple-layered structure includingITO layer/Ag layer/ITO layer that may be stacked on each othersequentially.

A pixel defining layer 119 may be on the pixel electrode 221. The pixeldefining layer 119 may cover edges of the pixel electrode 221 and mayinclude an opening 1190P overlapping a central portion of the pixelelectrode 221. The pixel defining layer 119 may include an organicinsulating material and/or an inorganic insulating material. The opening1190P may define an emission area of the light emitted from the organiclight-emitting diode OLED. In the specification, the emission area ofthe light denotes a size of a sub-pixel.

The intermediate layer 222 may include an emission layer 222 boverlapping the pixel electrode 221. The emission layer 222 b mayinclude an organic material. The emission layer 222 b may include apolymer and/or low-molecular weight organic material emitting certaincolor light. The emission layer 222 b may be obtained through adeposition process using a mask.

A first functional layer 222 a and a second functional layer 222 c maybe under and/or on the emission layer 222 b.

The first functional layer 222 a may have a single-layered ormulti-layered structure. For example, in case that the first functionallayer 222 a includes a polymer material, the first functional layer 222a may include a hole transport layer (HTL) having a single-layeredstructure, and may include poly-(3,4)-ethylene-dihydroxy thiophene(PEDOT) and/or polyaniline. In case that the first functional layer 222a includes a low-molecular weight material, the first functional layer222 a may include a hole injection layer (HIL) and an HTL.

The second functional layer 222 c may be optional. For example, in casethat the first functional layer 222 a and the emission layer 222 binclude a polymer material, the second functional layer 222 c may beformed. The second functional layer 222 c may have a single-layered ormulti-layered structure. The second functional layer 222 c may includean electron transport layer (ETL) and/or an electron injection layer(EIL).

Each of the first functional layer 222 a and the second functional layer222 c may be integrally provided to entirely cover the display area DAand the component area CA that will be described later with reference toFIG. 7 .

The opposite electrode 223 may include a conductive material having arelatively low work function. For example, the opposite electrode 223may include a (semi-)transparent layer including argentum (Ag),magnesium (Mg), aluminum (Al), nickel (Ni), chromium (Cr), lithium (Li),calcium (Ca), or an alloy thereof. As another example, the oppositeelectrode 223 may further include a layer including ITO, IZO, ZnO, orIn₂O₃ on the (semi-)transparent layer including the above material. Inan embodiment, the opposite electrode 223 may include argentum (Ag) andmagnesium (Mg).

A stack structure of the pixel electrode 221, the intermediate layer222, and the opposite electrode 223 that may be sequentially stacked oneach other may configure a light-emitting diode, e.g., an organiclight-emitting diode OLED. The organic light-emitting diode OLED may becovered by the thin film encapsulation layer 300.

The thin film encapsulation layer 300 may include first and secondinorganic encapsulation layers 310 and 330, and an organic encapsulationlayer 320 between the first and second inorganic encapsulation layers310 and 330.

The first and second inorganic encapsulation layers 310 and 330 may eachinclude one or more inorganic insulating materials. The inorganicinsulating material may include aluminum oxide, titanium oxide, tantalumoxide, hafnium oxide, zinc oxide, silicon oxide, silicon nitride, and/orsilicon oxynitride. The first and second inorganic encapsulation layers310 and 330 may be obtained by a chemical vapor deposition method. Here,the first and second inorganic encapsulation layers 310 and 330 may eachhave a thickness of about 1 μm to about 1.3 μm. A refractive index ofthe first and second inorganic encapsulation layers 310 and 330 may beabout 1.75 to about 1.85.

The organic encapsulation layer 320 may include a polymer-basedmaterial. The polymer-based material may include an acryl-based resin,an epoxy-based resin, polyimide, polyethylene, etc., or a combinationthereof. For example, the organic encapsulation layer 320 may include anacryl-based resin, e.g., polymethylmethacrylate, polyacrylic acid, etc.The organic encapsulation layer 320 may be obtained by curing a monomeror applying polymer. The organic encapsulation layer 320 including theacryl-based resin may have a refractive index of about 1.49 or less. Theorganic encapsulation layer 320 including an epoxy-based resin may havea refractive index of about 1.57 to about 1.61.

The touch input layer 40 may be on the second inorganic encapsulationlayer 320, and may include at least one inorganic layer and a sensingelectrode.

In the touch input layer 40, an insulating layer and a conductive layermay be alternately laminated. In an embodiment, the touch input layer 40may include a first insulating layer 401, a first conductive layer 402,a second insulating layer 403, a second conductive layer 404, and athird insulating layer 405. The first conductive layer 402 and thesecond conductive layer 404 may be connected to each other via a contacthole (not shown). The sensing electrode may be included in at least oneof the first conductive layer 402 and the second conductive layer 404.

The first conductive layer 402 or the second conductive layer 404 mayinclude a metal layer or a transparent conductive layer. The metal layermay include molybdenum (Mo), mendelebium (Mb), argentum (Ag), titanium(Ti), copper (Cu), aluminum (Al), and an alloy thereof. The transparentconductive layer may include a transparent conductive oxide materialsuch as indium tin oxide (ITO), indium zinc oxide (IZO), zinc oxide(ZnO), indium tin zinc oxide (ITZO), etc., or a combination thereof. Thetransparent conductive layer may include a conductive polymer such asPEDOT, metal nano-wires, graphene, etc., or a combination thereof.

The first conductive layer 402 or the second conductive layer 404 mayhave a single-layered or multi-layered structure. The first conductivelayer 402 or the second conductive layer 404 of the single-layeredstructure may include a metal layer or a transparent conductive layer,and the metal layer and the transparent conductive layer may include theabove stated materials. One of the first conductive layer 402 and thesecond conductive layer 404 may include a single metal layer. One of thefirst conductive layer 402 and the second conductive layer 404 mayinclude a multi-layered metal layer. The multi-layered metal layer mayinclude, for example, triple layers including titanium layer/aluminumlayer/titanium layer, or double layers including molybdenumlayer/mendelebium layer. As another example, the multi-layered metallayer may include a metal layer and a transparent conductive layer. Thefirst conductive layer 402 and the second conductive layer 404 may havethe stack structures that are the same as or different from each other.For example, the first conductive layer 402 may include a metal layer,and the second conductive layer 404 may include a transparent conductivelayer. As another example, the first conductive layer 402 and the secondconductive layer 404 may include a same metal layer.

The materials included in the first conductive layer 402 and the secondconductive layer 404 and the arrangement of sensing electrodes includedin the first conductive layer 402 and the second conductive layer 404may be determined according to a sensitivity. An RC delay may affect thesensitivity, and sensing electrodes including the metal layer may haveless resistance as compared with the transparent conductive layer, andthus, an RC value may be reduced. Therefore, a time taken to charge acapacitor defined between the sensing electrodes may be reduced. Thesensing electrodes including the transparent conductive layers may notbe visible by a user as compared with the metal layer, and an input areamay be increased to increase a capacitance.

Each of the first insulating layer 401, the second insulating layer 403,and the third insulating layer 405 may include an inorganic insulatingmaterial and/or an organic insulating material. The inorganic insulatingmaterial may include silicon oxide, silicon nitride, or siliconoxynitride, and the organic insulating material may include a polymerorganic material. In some embodiments, the first insulating layer 401may be omitted.

FIG. 7 is a schematic cross-sectional view of a component area CAaccording to an embodiment. FIG. 8 is a schematic cross-sectional viewshowing an enlarged view of the transmission area TA according to anembodiment.

Referring to FIGS. 7 and 8 , the component area CA may include thetransmission area TA. Two pixel circuits PC and two organiclight-emitting diodes OLED may be adjacent to each other with thetransmission area TA therebetween. The organic light-emitting diodesOLED may be electrically connected respectively to the pixel circuitsPC. The organic light-emitting diode OLED described above with referenceto FIG. 6 may correspond to a first display element in the display areaDA, and an organic light-emitting diode OLED shown in FIG. 7 maycorrespond to a second display element in the component area CA.

The structure of the organic light-emitting diode OLED, and thestructure of the pixel circuit PC including the thin film transistor TFTand the storage capacitor Cst shown in FIG. 7 may be substantially thesame as those described above with reference to FIG. 6 . Therefore, thedetailed structure of the organic light-emitting diode OLED and thestructures of the thin film transistor TFT and the storage capacitor Cstare not described, but differences from the above embodiment will bedescribed below.

The component 20 may be under the substrate 100. In particular, thecomponent 20 may correspond to the transmission area TA.

The lower metal layer BML may be between the substrate 100 and thebuffer layer 111. The lower metal layer BML may be under the thin filmtransistor TFT to prevent degradation in characteristics of the thinfilm transistor TFT due to the light emitted from the component 20, etc.

Also, the lower metal layer BML may be electrically connected to line CLthat may be in another layer via a contact hole. The lower metal layerBML may receive a constant voltage or a signal from the line CL. Forexample, the lower metal layer BML may receive a driving voltage or ascan signal. Because the lower metal layer BML may be provided with theconstant voltage or signal, a probability of generating an electrostaticdischarge may be noticeably reduced. The lower metal layer BML mayinclude aluminum (Al), platinum (Pt), palladium (Pd), argentum (Ag),magnesium (Mg), aurum (Au), neodymium (Nd), iridium (Ir), chromium (Cr),nickel (Ni), calcium (Ca), molybdenum (Mo), titanium (Ti), tungsten (W),and/or copper (Cu), or a combination thereof. The lower metal layer BMLmay have a single-layered or a multi-layered structure including theabove stated materials.

In an embodiment, the second barrier layer 104 may include a firsttransmission hole 104H. The first transmission hole 104H may correspondto the transmission area TA. The insulating layer IL between thesubstrate 100 and the organic light-emitting diode OLED may include asecond transmission hole ILH corresponding to the transmission area TA.Also, the buffer layer 111 between the insulating layer IL and thesubstrate 100 may include a third transmission hole 111H.

In an embodiment, the second transmission hole ILH may include a firsthole IILH of the inorganic insulating layer IIL and a second hole 117Hof the planarization layer 117. Also, the pixel defining layer 119 mayinclude a third hole 119H. The first hole IILH, the second hole 117H,and the third hole 119H may overlap one another in the transmission areaTA. The opposite electrode 223 may also include a fourth hole 223H inthe transmission area TA, and the fourth hole 223H may overlap the firsthole IILH, the second hole 117H, and the third hole 119H.

Some of the intermediate layer 222 in the organic light-emitting diodeOLED, e.g., the first functional layer 222 a and/or the secondfunctional layer 222 c, may be integrally provided to cover thetransmission area TA. As another example, the first functional layer 222a and/or the second functional layer 222 c may include a holecorresponding to the transmission area TA, similarly to the oppositeelectrode 223.

The thin film encapsulation layer 300 may entirely cover the displayarea DA and the component area CA. Therefore, the first inorganicencapsulation layer 310, the organic encapsulation layer 320, and thesecond inorganic encapsulation layer 330 may cover the transmission areaTA.

In an embodiment, the first insulating layer 401, the second insulatinglayer 403, and the third insulating layer 405 of the touch input layer40 may each include a transmission hole corresponding to thetransmission area TA. Here, a fifth hole 401H of the first insulatinglayer 401, a sixth hole 403H of the second insulating layer 403, and aseventh hole 405H of the third insulating layer 405 may overlap thefirst hole IILH, the second hole 117H, and the third hole 119H.

In an embodiment, the substrate 100 may include grooves 100Gvcorresponding to the transmission area TA. In particular, in anembodiment, the grooves 100Gv may be symmetrically provided about acentral line CPL that may be perpendicular to an upper surface of thesubstrate 100.

In an embodiment, the grooves 100Gv may be in the base layer to beconnected to the first transmission hole 104H. For example, the secondbarrier layer 104 may include the first transmission hole 104Hcorresponding to the transmission area TA, and the grooves 100Gv may bein the second base layer 103 to be connected to the first transmissionhole 104H.

In an embodiment, a depth of the grooves 100Gv may be substantially sameas a thickness of the base layer. For example, the grooves 100Gv mayhave a depth that may be substantially same as a thickness H1 of thesecond base layer 103. Lower surfaces in the grooves 100Gv may be theupper surface of the first barrier layer 102. For example, the grooves100Gv may be the through holes penetrating through the second base layer103. In some embodiments, the grooves 100Gv may have a depth that may bedifferent from the thickness of the base layer. However, the case inwhich the depths of the grooves 100Gv may be substantially same as thethickness of the base layer will be described in detail for convenienceof description.

In an embodiment, a width of one of the grooves 100Gv may besubstantially same as a width of another one of the grooves. Forexample, a first width d1 of one of the grooves 100Gv may besubstantially same as a second width d2 of another one of the grooves100Gv.

In an embodiment, the first inorganic encapsulation layer 310 and theorganic encapsulation layer 320 may extend to the second transmissionhole ILH to be on the grooves 100Gv. In detail, the first inorganicencapsulation layer 310 and the organic encapsulation layer 320 mayextend to the first transmission hole 104H, the second transmission holeILH, and the third transmission hole 111H.

In an embodiment, the first inorganic encapsulation layer 310 may beprovided according to the shapes of the grooves 100Gv. In detail, thefirst inorganic encapsulation layer 310 may be arranged along side andupper surfaces of the grooves 100Gv. Also, the organic encapsulationlayer 320 may extend to the second transmission hole ILH to be in thegrooves 100Gv. In detail, the organic encapsulation layer 320 may befilled inside the grooves 100Gv.

In an embodiment, diffraction of light proceeding from the thin filmencapsulation layer 300 to the component 20 in a direction towards thesubstrate 100 or light proceeding from the component 20 towards thesubstrate 100 may be prevented. In case that the grooves 100Gv are notin the substrate 100, the transmission area TA may function as onesingle slit. Therefore, there may be light loss due to the diffraction.However, as in an embodiment, in case that there are the grooves 100Gvin the substrate 100, the grooves 100Gv may function similarly tomultiple slits by adjusting a phase difference of the light. Therefore,the light loss caused by the diffraction may be reduced, and signal orimage distortion caused by the diffraction may be reduced. Also, thesecond base layer 103 may be partially removed in the transmission areaTA, and thus, an accumulative transmittance may be improved.

For example, a phase difference between first light passing through thegrooves 100Gv from an upper surface of the first barrier layer 102 andsecond light passing through a protrusion 103P between the grooves 100Gvfrom the upper surface of the first barrier layer 102 may depend on arefractive index of the organic encapsulation layer 320, a refractiveindex of the second base layer 103, and a thickness H1 of the secondbase layer 103. In particular, a path difference when the first lightand the second light respectively pass through the grooves 100Gv and theprotrusion 103P may be determined by multiplying a difference betweenthe refractive index of the organic encapsulation layer 320 and therefractive index of the second base layer 103 by the thickness H1 of thesecond base layer 103. Here, the refractive index of the organicencapsulation layer 320 may be about 1.49 in case of including theacryl-based resin, and about 1.57 to about 1.61 in case of including theepoxy-based resin. The refractive index of the second base layer 103 maybe about 1.5 to about 2. The thickness H1 of the second base layer 103may be about 5.8 μm to about 9 μm. In an embodiment, the first light andthe second light may be adjusted to have a phase difference to make thefirst light and the second light constructively interfere with eachother. Therefore, the diffraction may be reduced.

FIGS. 9A to 9C are schematic cross-sectional views showing an enlargedview of a transmission area TA according to another embodiment. In FIGS.9A to 9C, like reference numerals as those of FIG. 8 denote the samemembers, and thus, descriptions thereof are omitted.

Referring to FIGS. 9A to 9C, the display device may include thesubstrate 100 including a display area and the component area CA inwhich the transmission area TA may be provided. Here, the substrate 100may include grooves 100Gv corresponding to the transmission area TA.

Referring to FIG. 9A, four grooves 100Gv may be in the transmission areaTA. As described above, the number of grooves 100Gv may vary.

In an embodiment, the grooves 100Gv may be symmetrically provided abouta central line CPL that may be perpendicular to an upper surface of thesubstrate 100.

In an embodiment, a width of one of the grooves 100Gv may besubstantially same as a width of another one of the grooves. Forexample, a first width d1-1 of one of the grooves 100Gv may besubstantially same as a second width d2-1 of another one of the grooves100Gv. Here, the widths of the grooves 100Gv may denote distances in anx-direction.

In an embodiment, protrusions 103P may be respectively between adjacentgrooves 100Gv. The protrusions 103P may be apart from one another in thetransmission area TA. For example, a first protrusion 103Pa, a secondprotrusion 103Pb, and a third protrusion 103Pc may be disposed apartfrom one another. Here, the first protrusion 103Pa and the thirdprotrusion 103Pc may be symmetrical with each other based on the centralline CPL. The protrusions 103P and the material of the second base layer103 may have a same material.

In an embodiment, a width of one of the protrusions 103P may besubstantially same as a width of another one of the protrusions. Forexample, a first length t1-1 of the first protrusion 103Pa in thex-direction may be substantially same as a second length t2-1 of thesecond protrusion 103Pb in the x-direction.

Referring to FIG. 9B, the grooves 100Gv may have different widths fromone another. For example, a first width d1-2 of one of the grooves 100Gvmay be different from a second width d2-2 of another one of the grooves100Gv. Here, the first width d1-2 may be less than the second widthd2-2. In some embodiments, the first width d1-2 may be greater than thesecond width d2-2.

In an embodiment, the first protrusion 103Pa and the second protrusion103Pb may be symmetrical with each other based on the central line CPLthat may be perpendicular to the upper surface of the substrate 100.

In an embodiment, the first protrusion 103Pa and the second protrusion103Pb may have substantially same width. For example, a first lengtht1-2 of the first protrusion 103Pa in the x-direction may besubstantially same as a second length t2-2 of the second protrusion103Pb in the x-direction.

In an embodiment, a Fresnel diffraction of the light passing through thetransmission area TA may occur. Fresnel diffraction may be a diffractionthat occurs in case that at least one of a light source and anobservation portion may be at a finite distance with respect to adiffractive object (e.g., a single slit). The grooves 100Gv may havedifferent widths. In particular, the grooves 100Gv may be provided sothat the light passing through the grooves 100Gv and the light passingthrough the first and second protrusions 103Pa and 103Pb constructivelyinterfere with each other. Therefore, a loss in the light proceedingfrom the thin film encapsulation layer 300 to the component 20 in thedirection towards the substrate 100 and in the light proceeding from thecomponent 20 towards the substrate 100 may be reduced.

Referring to FIG. 9C, the protrusions 103P may have different widthsfrom one another. For example, a first length t1-3 of the firstprotrusion 103Pa in the x-direction may be different from a secondlength t2-3 of the second protrusion 103Pb in the x-direction. Inparticular, the first length t1-3 may be greater than the second lengtht2-3. In some embodiments, the first length t1-3 may be less than thesecond length t2-3.

In an embodiment, a first width d1-3 of one of the grooves 100Gv may bedifferent from a second width d2-3 of another one of the grooves 100Gv.In particular, the first width d1-3 may be less than the second widthd2-3. In some embodiments, the first width d1-3 may be greater than thesecond width d2-3. As another example, the first width d1-3 may besubstantially same as the second width d2-3.

In an embodiment, a Fresnel diffraction of the light passing through thetransmission area TA may occur. Here, the widths of the protrusions 103Pand the widths of the grooves 100Gv may be different from one another.In particular, the protrusions 103P and the grooves 100Gv may bearranged such that the light passing through the grooves 100Gv and thelight passing through the protrusions 103P may constructively interferewith each other. Therefore, a loss in the light proceeding from the thinfilm encapsulation layer 300 to the component 20 in the directiontowards the substrate 100 and in the light proceeding from the component20 towards the substrate 100 may be reduced.

Hereinafter, a method of manufacturing the display device including thegrooves 100Gv in the substrate 100 will be described below.

FIG. 10A is a schematic plan view in which an exposure mask maycorrespond to a component area CA and a display area DA. FIGS. 10B to10E are schematic cross-sectional views illustrating processes in amethod of manufacturing a display device according to an embodiment.FIGS. 10B to 10E are schematic cross-sectional views of the displaydevice taken along line B-B′ of FIG. 10A.

Referring to FIG. 10A, a photoresist layer (not shown) may be arrangedcorresponding to the component area CA. Here, the photoresist layer maybe one of a positive type or a negative type and may be applied onto thecomponent area CA. In detail, in a photoresist layer of a positive type,a region exposed to light may be etched during a developing process, andon the contrary, in a photoresist layer of a negative type, a regionother than a region exposed to light may be etched. Hereinafter, thecase in which the photoresist layer may be of a positive type will bedescribed in detail.

The photoresist layer may be obtained by applying a photoresist liquid(not shown) onto the substrate by various methods such as a spin-coatingmethod, a spraying method, or an immersion method.

Also, before applying the photoresist layer on the upper surface of thesubstrate 100, a process of polishing the upper surface of the substrate100 may be additionally performed.

Next, an exposure mask M including a mask opening MOP may be arranged tocorrespond to the component area CA and the display area DA.

The exposure mask M may include a body portion BP, at least one islandportion IP including a through hole TH, and at least one rib extendingthe at least one island portion IP to the body portion BP.

The body portion BP may include the mask opening MOP. The mask openingMOP may vary depending on a shape of the transmission area TA. There maybe multiple mask openings MOP in the body portion BP, and the maskopenings MOP may be apart from one another. Here, the island portion IPmay be in each of the mask openings MOP.

The island portion IP may partially block the mask opening MOP. Theisland portion IP may include the through hole TH, and may be in themask opening MOP. In FIG. 10A, two island portions IP may be in eachmask opening MOP, but three or more island portions IP may be in eachmask opening MOP.

The rib Rib may extend the island portion IP to the body portion BP.Here, the rib Rib may support the island portion IP. At least one ribRib may be in each mask opening MOP. For example, ribs Rib may be ineach mask opening MOP. In FIG. 10A, the ribs Rib may be extended tovertices of each island portion IP, but the ribs Rib may be variouslyarranged. In an embodiment, a width of the rib Rib may be less than awidth of the island portion IP.

Next, the photoresist layer may be exposed to light. Here, regions otherthan the regions blocked by the island portions IP and the body portionBP in the photoresist layer may be exposed to light. In detail, in thephotoresist layer, a first region R1 exposed by the mask opening MOP andthe through hole TH may be exposed to light. A region shielded by therib Rib may not be exposed to light for a short period of time, but maybe exposed to light by adjusting an exposure time. For example, thewidth of the rib Rib may be less than that of the island portion IP. Incase that the exposure time may be increased, a region shielded by theisland portion IP may not be exposed, but the region shielded by the ribRib may be exposed to light. Therefore, the region shielded by the ribRib may be exposed to light regardless of the existence of the rib Rib.

Next, the photoresist layer may be partially removed through adeveloping process. The photoresist layer may be obtained by using thephotoresist liquid of a positive type, and after the developing process,a region except for the first region R1 may be removed from thephotoresist layer.

Next, metal patterns and metal layers ML may be provided. In anembodiment, the metal patterns MP and the metal layers ML may beobtained through a plating process. For example, the metal patterns MPand the metal layers ML may be obtained by using an electro-formingmethod.

Next, referring to FIG. 10B, the remaining photoresist layer may beremoved. Here, the metal patterns MP may be apart from one another.

Next, referring to FIG. 10C, the substrate 100 may be etched by usingthe metal patterns MP as a mask. Here, the etching process may includedry etching. Therefore, the grooves 100Gv may be formed in the substrate100, corresponding to the component area CA. Also, the protrusions 103Pand upper protrusions 104P that may not be etched may be provided amongthe grooves 100Gv. The protrusion 103P may be a region that may not beetched due to the mask of the metal patterns MP in the second base layer103. The upper protrusion 104P may be a region that may not be etcheddue to the mask of the metal patterns MP in the second barrier layer104.

In an embodiment, the second base layer 103 and the second barrier layer104 in the substrate 100 may be etched. For example, the second baselayer 103 and the second barrier layer 104 may be etched to partiallyexpose an upper surface of the first barrier layer 102. The second baselayer 103 and the second barrier layer 104 may be etched for an adjustedetching time.

Next, referring to FIG. 10D, the buffer layer 111 may be formed on themetal layers ML. Here, the buffer layer 111 may be formed on the metallayers ML by using a mask shielding the grooves 100Gv.

Next, referring to FIG. 10E, the metal patterns MP may be removed. Here,the upper protrusions 104P may be simultaneously removed. The metalpatterns MP and the upper protrusions 104P may be removed through anetching process and an ashing process. In particular, the etchingprocess may include wet-etching. As another example, after forming athick buffer layer 111, a polishing process may be entirely performed toremove the metal patterns MP and the upper protrusions 104P.

Therefore, the display device including the grooves 100Gv in thesubstrate 100 may be manufactured.

FIG. 11A is an enlarged schematic view of region A in FIG. 3 accordingto another embodiment. FIG. 11B is an enlarged schematic view of thetransmission area TA of FIG. 11A. FIG. 11C is an enlarged schematic viewof region A in FIG. 3 according to another embodiment. In FIGS. 11A to11C, like reference numerals as those of FIGS. 5A to 5C denote the samemembers, and thus, descriptions thereof are omitted.

Referring to FIGS. 11A and 11B, the display device may include thesubstrate 100 which may include the display area DA including a firstdisplay element and the component area CA including a second displayelement and the transmission area TA.

In an embodiment, lower metal patterns BMLP may correspond to thetransmission area TA, and may be disposed apart from one another. Forexample, the lower metal patterns BMLP may include a first lower metalpattern BMLPa, a second lower metal pattern BMLPb, and a third lowermetal pattern BMLPc. In another example, the lower metal patterns BMLPmay include the first lower metal pattern BMLPa and the second lowermetal pattern BMLPb. In another example, the lower metal patterns BMLPmay include four or more lower metal patterns. Hereinafter, the case inwhich the lower metal patterns BMLP include the first lower metalpattern BMLPa, the second lower metal pattern BMLPb, and the third lowermetal pattern BMLPc as shown in FIG. 11A will be described in detailbelow.

In an embodiment, the lower metal patterns BMLP may extend to form aclosed line shape in the transmission area TA. For example, the lowermetal patterns BMLP may extend along virtual single closed curves SCC-1in the transmission area TA. Here, the closed line shape (e.g., singleclosed curve SCC-1) may denote a closed figure having a starting pointand an ending point that may be the same as each other, e.g., a polygon,a circle, or an ellipse. For example, the first lower metal patternBMLPa may extend to form a closed line shape (e.g., along a virtualfirst single closed curve SCCa-1). The second lower metal pattern BMLPbmay extend to form a closed line shape (e.g., along a virtual secondsingle closed curve SCCb-1). The third lower metal pattern BMLPc mayextend to form a closed line shape (e.g., along a virtual third singleclosed curve SCCc-1).

In an embodiment, central points CP-1 of the single closed curves SCC-1may be the same as one another. For example, the first single closedcurve SCCa-1, the second single closed curve SCCb-1, and the thirdsingle closed curve SCCc-1 may have the same central points CP-1. Here,the single closed curves SCC-1 may be in a similarity relationship witheach other.

In an embodiment, the first lower metal pattern BMLPa may surround thesecond lower metal pattern BMLPb. Also, the second lower metal patternBMLPb may surround the third lower metal pattern BMLPc.

Referring to FIG. 11B, the lower metal patterns BMLP may be provided inrectangular shapes. In detail, the first single closed curve SCCa-1 mayhave a rectangular shape. Therefore, the first lower metal pattern BMLPamay extend in a rectangular shape. Also, the second lower metal patternBMLPb and the third lower metal pattern BMLPc may extend in rectangularshapes. In particular, in some embodiments, the lower metal patternsBMLP may be provided in square shapes.

Referring to FIG. 11C, the lower metal patterns BMLP may includecurvature areas. In particular, the lower metal patterns BMLP may havecircular shapes or elliptical shapes. Here, the lower metal patternsBMLP may be in the similarity relationship with one another.

In an embodiment, the lower metal patterns BMLP may be provided toprevent the light from being diffracted while passing through thetransmission area TA. In particular, in case that the lower metalpatterns BMLP are in the similarity relationship, the diffraction may befurther reduced.

FIGS. 12A to 12C are schematic cross-sectional views showing an enlargedview of a transmission area TA according to another embodiment. In FIGS.12A to 12C, like reference numerals as those of FIGS. 9A to 9C denotethe same members, and thus, descriptions thereof are omitted.

Referring to FIGS. 12A to 12C, the display device may include thesubstrate 100 including a display area and the component area CA inwhich the transmission area TA may be provided. Here, the lower metalpatterns BMLP corresponding to the transmission area TA may be on thesubstrate 100 to be apart from one another.

In an embodiment, the substrate 100 may include the first base layer101, the first barrier layer 102, the second base layer 103, and thesecond barrier layer 104. In some embodiments, the substrate 100 mayinclude glass.

In an embodiment, the lower metal layer BML may be between the substrate100 and a second display element (not shown). In detail, the lower metallayer BML may be between the substrate 100 and the buffer layer 111. Thelower metal layer BML and the lower metal patterns BMLP may be in a samelayer, and the lower metal layer BML may be apart from the lower metalpatterns BMLP. The lower metal patterns BMLP and lower metal layer BMLmay include a same material.

In an embodiment, the lower metal patterns BMLP may be in thetransmission area TA. In detail, the lower metal patterns BMLP may be ina third transmission hole 111H of the buffer layer 111.

In an embodiment, the first inorganic encapsulation layer 310 and theorganic encapsulation layer 320 may be on the lower metal patterns BMLP.In particular, the first inorganic encapsulation layer 310 may bearranged along the shapes of the lower metal patterns BMLP. In detail,the first inorganic encapsulation layer 310 may be arranged along sidesurfaces and upper surfaces of the lower metal patterns BMLP.

In an embodiment, the lower metal patterns BMLP may be symmetricallyarranged based on the central line CPL that may be perpendicular to theupper surface of the substrate 100.

In an embodiment, one of the lower metal patterns BMLP may havesubstantially same width as a width of another one of the lower metalpatterns. For example, among the lower metal patterns BMLP, a firstwidth Tt1 of a first pattern BMLP1, a second width Tt2 of a secondpattern BMLP2, and a third width Tt3 of a third pattern BMLP3 may besubstantially same as one another.

In an embodiment, intervals of the lower metal patterns BMLP may besubstantially same as one another. For example, a first distance dis1between the first pattern BMLP1 and the second pattern BMLP2 and asecond distance dis2 between the second pattern BMLP2 and the thirdpattern BMLP3 may be substantially same as each other.

In an embodiment, diffraction of light proceeding from the thin filmencapsulation layer 300 to the component 20 in a direction towards thesubstrate 100 or light proceeding from the component 20 towards thesubstrate 100 may be prevented. In case that the lower metal patternsBMLP are on the substrate 100, the lower metal patterns BMLP mayfunction as multiple slits, and thus, loss of light caused by thediffraction may be reduced and signal or image distortion caused by thediffraction may be reduced.

Referring to FIG. 12B, a distance between the adjacent lower metalpatterns BMLP may be different from a distance between other adjacentlower metal patterns BMLP.

For example, a first distance dis1-1 between the first pattern BMLP1 andthe second pattern BMLP2 may be different from a second distance dis2-1between the second pattern BMLP2 and the third pattern BMLP3. Here, afirst width Tt1-1 of the first pattern BMLP1, a second width Tt2-1 ofthe second pattern BMLP2, and a third width Tt3-1 of the third patternBMLP3 may be substantially same as one another.

Referring to FIG. 12C, a width of one of the lower metal patterns BMLPmay be different from a width of another one of the lower metal patternsBMLP. For example, a first width Tt1-2 of the first pattern BMLP1 may bedifferent from a second width Tt2-2 of the second pattern BMLP2. Here,the first width Tt1-2 may be less than the second width Tt2-2. In someembodiments, the first width Tt1-2 may be greater than the second widthTt2-2.

In the example shown in FIG. 12B or FIG. 12C, Fresnel diffraction of thelight passing through the transmission area TA may occur. Here, theintervals among the lower metal patterns BMLP and the widths of thelower metal patterns BMLP may be different from one another. Inparticular, the intervals among the lower metal patterns BMLP and thewidth of each of the lower metal patterns BMLP may be set such that raysof light passing respectively between the adjacent lower metal patternsBMLP may constructively interfere with each other. Therefore, a loss inthe light proceeding from the thin film encapsulation layer 300 to thecomponent 20 in the direction towards the substrate 100 and in the lightproceeding from the component 20 towards the substrate 100 may bereduced.

As described above, according to the embodiment, the diffraction oflight may be reduced by including the grooves corresponding to thetransmission area in the substrate.

Also, according to another embodiment, the diffraction of light may bereduced by including the lower metal patterns that may be apart from oneanother to correspond to the transmission area.

It should be understood that embodiments described herein should beconsidered in a descriptive sense only and not for purposes oflimitation. Descriptions of features or aspects within each embodimentshould typically be considered as available for other similar featuresor aspects in other embodiments. While one or more embodiments have beendescribed with reference to the figures, it will be understood by thoseof ordinary skill in the art that various changes in form and detailsmay be made therein without departing from the spirit and scope asdefined by the following claims, including any equivalents.

What is claimed is:
 1. A display device comprising: a substratecomprising a display area and a component area including a transmissionarea; and display elements disposed on the substrate, wherein thesubstrate comprises grooves corresponding to the transmission area ofthe component area.